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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 54  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
15:50
Online Online GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] ED2020-13 CPM2020-34 LQE2020-64
pp.49-52
LQE, CPM, ED 2020-11-27
11:20
Online Online Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] ED2020-16 CPM2020-37 LQE2020-67
pp.60-62
LQE, CPM, ED 2017-11-30
15:50
Aichi Nagoya Inst. tech. Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices
Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] ED2017-54 CPM2017-97 LQE2017-67
pp.23-26
WPT, EMCJ
(Joint)
2017-11-21
16:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] GaN Diode Rectifier Fabricated in Our Lab
Yuya Ikedo, Naoki Kato, Yuma Ito, Keichi Tamesue, Junpei Sumino, Hiroto Terasima (Nagoya Inst. of Tech.) WPT2017-53
(To be available after the conference date) [more] WPT2017-53
pp.49-52
CPM, LQE, ED 2016-12-12
16:10
Kyoto Kyoto University AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] ED2016-64 CPM2016-97 LQE2016-80
pp.35-39
CPM, LQE, ED 2016-12-12
16:35
Kyoto Kyoto University Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate
Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) ED2016-65 CPM2016-98 LQE2016-81
We have fabricated a novel AlGaN/GaN HEMT with a multi-grooved and fin-shaped gate field-plate (G-FP), and studied its e... [more] ED2016-65 CPM2016-98 LQE2016-81
pp.41-44
MW 2016-11-18
11:20
Saga Saga Univ. Effect of buffer trap on low-frequency equivalent circuit parameters of GaN HEMTs
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.) MW2016-128
To examine the effect of the traps in the GaN HEMT, equivalent circuit parameters in the low-frequency was measured. Res... [more] MW2016-128
pp.69-72
ED, LQE, CPM 2015-11-27
11:40
Osaka Osaka City University Media Center Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate
Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] ED2015-83 CPM2015-118 LQE2015-115
pp.77-80
SDM 2015-06-19
09:30
Aichi VBL, Nagoya Univ. [Invited Lecture] Interface states characterization of Al2O3/AlGaN/GaN structures
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] SDM2015-38
pp.1-4
CPM, ED, SDM 2014-05-28
16:30
Aichi   Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application
Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is ma... [more] ED2014-29 CPM2014-12 SDM2014-27
pp.55-58
ED, MW 2014-01-17
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
pp.79-84
MW, ED 2013-01-18
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of drain leakage current in AlGaN/GaN HEMT
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] ED2012-125 MW2012-155
pp.69-74
ED, LQE, CPM 2012-11-29
15:25
Osaka Osaka City University Effects of process conditions on AlGaN/GaN hetero-MOS structures
Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] ED2012-74 CPM2012-131 LQE2012-102
pp.37-40
ED, LQE, CPM 2012-11-29
16:15
Osaka Osaka City University Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] ED2012-76 CPM2012-133 LQE2012-104
pp.45-50
LQE, ED, CPM 2011-11-17
15:15
Kyoto Katsura Hall,Kyoto Univ. Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] ED2011-82 CPM2011-131 LQE2011-105
pp.43-48
CPM, SDM, ED 2011-05-20
16:40
Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
CPM, SDM, ED 2011-05-20
17:30
Aichi Nagoya Univ. (VBL) Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition
Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49
We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical pr... [more] ED2011-36 CPM2011-43 SDM2011-49
pp.185-190
MW, ED 2011-01-14
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] ED2010-183 MW2010-143
pp.45-50
CPM, LQE, ED 2010-11-12
11:15
Osaka   Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] ED2010-157 CPM2010-123 LQE2010-113
pp.67-70
ED 2010-06-17
14:25
Ishikawa JAIST Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors
Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) ED2010-36
(To be available after the conference date) [more] ED2010-36
pp.17-20
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