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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
HWS, VLD [detail] 2021-03-03
13:25
Online Online [Memorial Lecture] Mode-wise Voltage-scalable Design with Activation-aware Slack Assignment for Energy Minimization
TaiYu Cheng (Osaka Univ.), Yutaka Masuda (Nagoya Univ.), Jun Nagayama, Yoichi Momiyama (Socionext Inc.), Jun Chen, Masanori Hashimoto (Osaka Univ.) VLD2020-72 HWS2020-47
This paper proposes a design optimization methodology that can achieve a mode-wise voltage scalable (MWVS) design with a... [more] VLD2020-72 HWS2020-47
p.30
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-23
13:50
Tottori Tottori Univ. [Poster Presentation] Investigation of correlation between PL temperature characteristics and charge transfer state (CTS) in Eu3+ activated red multi-anion compound phosphors
Misa Kawashima, Ken Kinoshita, Takuya Sohma, Kodai Nakamoto, Tadashi Ishigaki (Tottori Univ.), Takashi Kunimoto (Tokushima Bunri Univ.), Koutoku Ohmi (Tottori Univ.) EID2019-7
Eu3+ activated red multi-anion compound phosphors, such as Y4Si2O7N2:Eu3+ (YSON), La2O3:Eu3+ (LO) and LaOF:Eu3+ (LOF), h... [more] EID2019-7
pp.37-40
US 2018-07-31
13:30
Kyoto   Temperature dependence of reorientational viscosity of cyano-biphenyl liquid crystals in isotropic phase
Tatsuro Matsuoka, Ken Okada (Nagoya Univ.) US2018-34
It has been reported that cyanobiphenyl type liquid crystals make molecular association even in isotropic phase and they... [more] US2018-34
pp.19-21
VLD, HWS
(Joint)
2018-03-02
11:20
Okinawa Okinawa Seinen Kaikan Energy Reduction of Standard-Cell Memory Exploiting Selective Activation
Jun Shiomi, Tohru Ishihara, Hidetoshi Onodera (Kyoto Univ.) VLD2017-124
On-chip memories have a large impact on energy-efficiency of LSI circuits. This paper discusses energy-efficient on-chip... [more] VLD2017-124
pp.211-216
SDM 2016-01-28
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Understanding of BTI for Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122
(To be available after the conference date) [more] SDM2015-122
pp.9-12
RCS 2015-06-25
09:40
Hokkaido Hokkaido Univ. Online Probabilistic Activation Control of Picocells for System Throughput Maximization in Heterogeneous Networks
Yusaku Yamazaki, Kenichi Higuchi (Tokyo Univ. of Science) RCS2015-63
In this paper, we propose an online probabilistic activation/deactivation control of pico base stations (BSs) for hetero... [more] RCS2015-63
pp.101-106
SDM 2015-01-27
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] SDM2014-143
pp.33-36
SDM 2013-12-13
13:50
Nara NAIST Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source
Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus) SDM2013-127
To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was ex... [more] SDM2013-127
pp.67-72
ED, LQE, CPM 2012-11-30
14:55
Osaka Osaka City University The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films
Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115
Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficienc... [more] ED2012-87 CPM2012-144 LQE2012-115
pp.103-108
NC 2012-07-30
13:45
Shiga Ritsumeikan Univ. College of Information Science and Engineering On local analytic activation function in quaternionic hopfield neural network
Teijiro Isokawa, Haruhiko Nishimura, Nobuyuki Matsui (Univ. Hyogo) NC2012-18
It is difficult to introduce appropriate activation functions to neural networks in the hypercomplex domains, and few fu... [more] NC2012-18
pp.25-30
SDM 2011-12-16
11:20
Nara NAIST Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Curr... [more] SDM2011-136
pp.23-28
AN, MoNA, USN
(Joint)
2011-01-21
15:50
Hiroshima Hiroshima City University Improvement of the Node Activity Rate by Introduction of New Inactive Node Reactivation Condition in Solar-Powered Wireless Sensor Networks
Kentaro Ota, Kentaro Kobayashi, Takaya Yamazato, Masaaki Katayama (Nagoya Univ.) USN2010-63
Our goal is improvement of the node activity rate in solar-powered wireless sensor networks. One method to reduce the co... [more] USN2010-63
pp.137-142
 Results 1 - 12 of 12  /   
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