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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2012-12-17
15:55		 Tokyo Tokyo Tech Front [Poster Presentation] Near Threshold Voltage Word-Line Voltage Injection Scheme for Self-Convergence of Threshold Voltage Variation in Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM
Daisuke Kobayashi, Kousuke Miyaji (Chuo Univ.), Shinji Miyano (STARC), Ken Takeuchi (Chuo Univ.) ICD2012-94		 In order to repair the reduction of read margin by the variation of threshold voltage VTH in 6T-SRAM, a unique scheme th... [more] ICD2012-94
p.31
ICD 2011-04-19
10:55		 Hyogo Kobe University Takigawa Memorial Hall 0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11		 This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] ICD2011-11
pp.59-63
ICD 2007-04-13
09:40		 Oita   [Invited Talk] A 65 nm Embedded SRAM with Wafer Level Burn-In Mode, Leak-Bit Redundancy and E-trim Fuse for Known Good Die
Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono (Renesas Technology), Yuji Oda (Shikino High-Tech), Susumu Imaoka (Renesas Design), Keiichi Usui (Daioh Electric), Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara (Renesas Technology) ICD2007-11		 We propose a Wafer Level Burn-In (WLBI) mode, a leak-bit redundancy and a small, highly reliable Cu E-trim fuse repair s... [more] ICD2007-11
pp.59-64
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