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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, SDM, ED 2011-05-19
10:50		 Aichi Nagoya Univ. (VBL) Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer
Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18		 3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is dif... [more] ED2011-5 CPM2011-12 SDM2011-18
pp.21-26
CPM, ED, SDM 2008-05-16
15:05		 Aichi Nagoya Institute of Technology Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method
Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40		 Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] ED2008-20 CPM2008-28 SDM2008-40
pp.95-100
ED, SDM 2007-06-25
15:55		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Analysis of plasma etching damages in GaN by excess carrier lifetime measurements
Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) 		Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more]
SDM, ED, CPM 2007-05-24
14:50		 Shizuoka Shizuoka Univ. Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) 		Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
 Results 1 - 4 of 4  /   
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