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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2011-10-21 10:50 |
Miyagi |
Tohoku Univ. (Niche) |
AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) SDM2011-106 |
We have investigated the effect of HF, HF + air exposure, (NH4)2S and Hexamethydisilazane treatments on the chemical bon... [more] |
SDM2011-106 pp.53-58 |
CPM, SDM, ED |
2011-05-20 17:30 |
Aichi |
Nagoya Univ. (VBL) |
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49 |
We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical pr... [more] |
ED2011-36 CPM2011-43 SDM2011-49 pp.185-190 |
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