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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
AI 2021-02-12
10:15
Online Online Analysis of the impact of COVID-19 on financial markets by applying entropy to alternative data and financial data
Yosuke Nishikawa, Teruaki Hayashi (UT), Takaaki Yoshino, Toshiaki Sugie, Kota Takano, Kakeru Itou, Yoshiyuki Nakata (NAM), Yukio Ohsawa (UT) AI2020-25
It is important for investors to use alternative data to analyze financial markets to diversify their analysis. In this ... [more] AI2020-25
pp.18-23
SDM, EID 2017-12-22
10:45
Kyoto Kyoto University Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-12 SDM2017-73
pp.5-8
SDM, EID 2017-12-22
11:00
Kyoto Kyoto University Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC -- Relationship between Inversion of Hall Coefficient and Conduction Mechanism --
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-13 SDM2017-74
pp.9-12
SDM, EID 2017-12-22
11:15
Kyoto Kyoto University Electric properties in Al-N codoped p-type 4H-SiC epilayers -- Comparison between temperature dependent resistivity in Al-doped and codoped samples --
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] EID2017-14 SDM2017-75
pp.13-16
 Results 1 - 4 of 4  /   
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