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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
AI |
2021-02-12 10:15 |
Online |
Online |
Analysis of the impact of COVID-19 on financial markets by applying entropy to alternative data and financial data Yosuke Nishikawa, Teruaki Hayashi (UT), Takaaki Yoshino, Toshiaki Sugie, Kota Takano, Kakeru Itou, Yoshiyuki Nakata (NAM), Yukio Ohsawa (UT) AI2020-25 |
It is important for investors to use alternative data to analyze financial markets to diversify their analysis. In this ... [more] |
AI2020-25 pp.18-23 |
SDM, EID |
2017-12-22 10:45 |
Kyoto |
Kyoto University |
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] |
EID2017-12 SDM2017-73 pp.5-8 |
SDM, EID |
2017-12-22 11:00 |
Kyoto |
Kyoto University |
Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] |
EID2017-13 SDM2017-74 pp.9-12 |
SDM, EID |
2017-12-22 11:15 |
Kyoto |
Kyoto University |
Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] |
EID2017-14 SDM2017-75 pp.13-16 |
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