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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 20件中 1~20件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2020-01-31
15:35
Tokyo Kikai-Shinko-Kaikan Bldg. Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation
Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.)
 [more]
MW 2019-11-14
15:10
Okinawa Minami Daido Villa. Tamokuteki Koryu Center A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network
Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo (MitsubishiElectric) MW2019-105
 [more] MW2019-105
pp.29-34
COMP 2018-12-12
13:30
Miyagi Tohoku University [Invited Talk] 0/1/all CSPs, Half-Integral A-path Packing, and Linear-Time FPT Algorithms
Yoichi Iwata (NII), Yutaro Yamaguchi (Osaka Univ.), Yuichi Yoshida (NII) COMP2018-35
0/1/all CSPs can be solved in linear time by a simple DFS called a unit propagation.
We consider an optimization varian... [more]
COMP2018-35
p.23
MW 2018-11-15
10:50
Nagasaki Fukue Cultural Hall A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application
Keigo Nakatani, Yutaro Yamaguchi, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric) MW2018-94
 [more] MW2018-94
pp.13-18
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] 2018-07-19
15:25
Hokkaido   A Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement
Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29
 [more] EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29
pp.125-130
COMP 2018-03-05
11:00
Osaka Osaka Prefecture Univ. [Invited Talk] Stochastic Packing Integer Programs with Few Queries
Takanori Maehara (RIKEN), Yutaro Yamaguchi (Osaka Univ./RIKEN) COMP2017-47
We consider a stochastic variant of the packing-type integer linear programming problem, which contains random variables... [more] COMP2017-47
p.17
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
16:40
Akita Yupopo Demonstration of Uniform Heating Distribution Control for Microwave Heating Small Reactor with Solid-State Oscillators
Kazuhiro Iyomasa, Yoshifumi Kawamura, Ryota Komaru, Yutaro Yamaguchi, Keigo Nakatani, Takeshi Shiode, Koji Yamanaka, Kazutomi Mori, Hiroshi Fukumoto (Melco) EMCJ2017-58 MW2017-110 EST2017-73
(To be available after the conference date) [more] EMCJ2017-58 MW2017-110 EST2017-73
pp.171-175
MW, ED 2017-01-27
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183
 [more] ED2016-107 MW2016-183
pp.57-62
MW, ED 2017-01-27
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] ED2016-108 MW2016-184
pp.63-68
MW 2016-11-17
14:30
Saga Saga Univ. Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) MW2016-122
In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF ... [more] MW2016-122
pp.33-38
MW 2016-11-17
14:55
Saga Saga Univ. Industrial microwave heating device using GaN amplifier module
Kazuhiro Iyomasa, Koji Yamanaka, Takeshi Shiode, Hiroyuki Mizutani, Masaomi Tsuru, Yoshifumi Kawamura, Takaaki Yoshioka, Yuji Komatsuzaki, Yutaro Yamaguchi, Keigo Nakatani, Ryuta Komaru, Kazutomi Mori, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-123
(To be available after the conference date) [more] MW2016-123
pp.39-42
MW, WPT 2016-04-21
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode
Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) WPT2016-3 MW2016-3
High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave powe... [more] WPT2016-3 MW2016-3
pp.11-15
MW 2015-05-28
13:50
Tokyo The Univ. of Electro-Commun. Large Signal Modeling of GaN-on-Si Transistor for Microwave Heating
Christer M. Andersson, Yutaro Yamaguchi, Kazuhiro Iyomasa, Yoshifumi Kawamura, Shuichi Sakata, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric) MW2015-21
In this paper, the large signal model of a GaN-on-Si transistor to be employed in microwave heating systems is reported.... [more] MW2015-21
pp.1-5
ED, CPM, SDM 2015-05-28
16:40
Aichi Venture Business Laboratory, Toyohashi University of Technology Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] ED2015-23 CPM2015-8 SDM2015-25
pp.35-39
WPT, MW 2015-04-16
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. Prototype of the 5.8GH-band high efficiency rectifier with a high breakdown voltage GaAs SBD
Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Atsushi Yamamoto, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric) WPT2015-5 MW2015-5
Rectifiers used for receivers of the microwave power transmission systems, such as space solar power systems, needs an i... [more] WPT2015-5 MW2015-5
pp.21-25
MW, ED 2015-01-16
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
pp.71-76
WPT 2014-06-06
13:55
Tokyo Univ. of Tokyo Study of a 5.8GHz-band high efficiency rectifier with a high breakdown voltage GaAs schottky barrier diode
Toshiyuki Tanaka, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Atsushi Yamamoto, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric) WPT2014-25
A rectifier used in receivers of microwave power transmission, such as space solar power systems, needs having high RF-D... [more] WPT2014-25
pp.5-10
MW, ED 2013-01-18
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. The study of SSPS GaN amplifier for high-efficiency operation by gate length
Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] ED2012-121 MW2012-151
pp.49-52
MW, ED 2013-01-18
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of drain leakage current in AlGaN/GaN HEMT
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] ED2012-125 MW2012-155
pp.69-74
MW, ED 2011-01-14
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] ED2010-188 MW2010-148
pp.69-73
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