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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)
2012-06-27
11:30
Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
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