|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2014-01-16 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
2D Device Simulation of AlGaN/GaN HFETs Side-Gating Effect Yusuke Ikawa (Univ. of Tokushima), Keunsam Lee (Nihon Synopsys), Jin-Ping Ao (Univ. of Tokushima), Yasuo Ohno (e-Device) ED2013-118 MW2013-183 |
[more] |
ED2013-118 MW2013-183 pp.47-52 |
LQE, ED, CPM |
2011-11-17 15:15 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] |
ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
ED, LQE, CPM |
2009-11-20 11:20 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130 |
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] |
ED2009-151 CPM2009-125 LQE2009-130 pp.109-114 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|