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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2021-08-18
11:00		 Online Online [Invited Talk] Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance -- Toward embedded memory in advanced technology nodes --
Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9		 In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] SDM2021-38 ICD2021-9
pp.42-47
ICD 2016-04-14
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance
Hitoshi Saito, Ko Nakamura, Soichiro Ozawa, Naoya Sashida, Satoru Mihara, Yukinobu Hikosaka, Wensheng Wang, Tomoyuki Hori, Kazuaki Takai, Mitsuharu Nakazawa, Noboru Kosugi, Makoto Hamada, Shoichiro Kawashima, Takashi Eshita, Masato Matsumiya (FSL) ICD2016-9		 We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to ... [more] ICD2016-9
pp.45-49
ICD, SDM 2010-08-27
10:15		 Hokkaido Sapporo Center for Gender Equality [Invited Talk] Development of sub-10um Thinning Technology using Actual Device Wafers
Nobuhide Maeda, Kim Youngsuk (Univ. of Tokyo), Yukinobu Hikosaka, Takashi Eshita (FSL), Hideki Kitada, Koji Fujimoto (Univ. of Tokyo), Yoriko Mizushima (Fujitsu Labs.), Kousuke Suzuki (DNP), Tomoji Nakamura (Fujitsu Labs.), Akihito Kawai, Kazuhisa Arai (DISCO), Takayuki Ohba (Univ. of Tokyo) SDM2010-141 ICD2010-56		 200-mm and 300-mm device wafers were successfully thinned down to less than 10-μm. A 200-nm non-crystalline layer remain... [more] SDM2010-141 ICD2010-56
pp.95-97
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