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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2013-10-17 16:10 |
Miyagi |
Niche, Tohoku Univ. |
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91 |
[more] |
SDM2013-91 pp.15-20 |
SDM |
2013-10-18 09:30 |
Miyagi |
Niche, Tohoku Univ. |
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) SDM2013-92 |
[more] |
SDM2013-92 pp.21-25 |
SDM |
2012-10-26 09:55 |
Miyagi |
Tohoku Univ. (Niche) |
Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93 |
[more] |
SDM2012-93 pp.21-26 |
SDM |
2012-10-26 10:20 |
Miyagi |
Tohoku Univ. (Niche) |
[Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) SDM2012-94 |
[more] |
SDM2012-94 pp.27-32 |
SDM, ED (Workshop) |
2012-06-27 14:45 |
Okinawa |
Okinawa Seinen-kaikan |
100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] |
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SDM |
2010-10-21 17:10 |
Miyagi |
Tohoku University |
Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-157 |
[more] |
SDM2010-157 pp.25-30 |
ED, SDM |
2010-07-02 15:30 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-119 SDM2010-120 |
[more] |
ED2010-119 SDM2010-120 pp.303-308 |
SDM |
2009-10-29 14:00 |
Miyagi |
Tohoku University |
High current drivability transistors with optimized silicides for n+- and p+-Si Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2009-117 |
Formation process of silicide/silicon contact with low contact resistance in the source/drain regions has been developed... [more] |
SDM2009-117 pp.1-6 |
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