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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2023-08-02 13:15 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)  SDM2023-45 ICD2023-24 |
(To be available after the conference date) [more] | SDM2023-45 ICD2023-24 pp.45-49 |
| SDM, OME | 2021-04-23 16:20 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Hot Carrier Effect in Oxide Thin Film Transistors Yukiharu Uraoka, Takanori Takahashi, Mami Fujii, Juan Paolo Bermundo, Mutsunori Uenuma (NAIST) SDM2021-6 OME2021-6 |
[more] | SDM2021-6 OME2021-6 pp.22-25 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:00 |
Online | Online | Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) EID2020-9 SDM2020-43 |
[more] | EID2020-9 SDM2020-43 pp.35-36 |
| SDM, OME | 2020-04-13 14:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Low temperature crystallization of silicon thin film and its application to thin film transistor Yukiharu Uraoka (NAIST) |
[more] | |
| SDM, EID, ITE-IDY [detail] | 2019-12-24 13:25 |
Nara | NAIST | Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2019-5 SDM2019-80 |
[more] | EID2019-5 SDM2019-80 pp.1-4 |
| SDM, EID, ITE-IDY [detail] | 2019-12-24 14:25 |
Nara | NAIST | Construction of CuInS2 nanoparticles through a bio-templated precursor by the cage-shaped protein for quantum devices Yuma Karaki, Ryoko Miyanaga, Naofumi Okamoto, Yasuaki Ishikawa (NAIST), Ichiro Yamashita (Osaka Univ.), Yukiharu Uraoka (NAIST) EID2019-6 SDM2019-81 |
(To be available after the conference date) [more] | EID2019-6 SDM2019-81 pp.13-16 |
| SDM, EID, ITE-IDY [detail] | 2019-12-24 16:00 |
Nara | NAIST | Stable Growth of (100)-Oriented Low Angle Grain Boundary Silicon Thin Films Extending to the length of 3000 μm by a Continuous-Wave Laser Lateral Crystallization Muhammad Arif Razali, Nobuo Sasaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
The continuous wave laser lateral crystallization of amorphous-Si on quartz produces a {100}-oriented grain-boundary fre... [more] | |
| SDM, EID | 2017-12-22 13:45 |
Kyoto | Kyoto University | Three-dimension periodic nano-structure fabricated by proximity nano-patterning process (PnP) Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Yukiharu Uraoka (NAIST), Seokwoo Jeon (KAIST) EID2017-18 SDM2017-79 |
In recent years, 3D periodic nanostructure have attracted considerable interest because of its excellent performance and... [more] | EID2017-18 SDM2017-79 pp.35-38 |
| SDM, EID | 2016-12-12 09:30 |
Nara | NAIST | Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique) EID2016-9 SDM2016-90 |
In recent years, the study of tandem solar cells that enable to achieve high efficiency has gathered much attention. The... [more] | EID2016-9 SDM2016-90 pp.1-6 |
| SDM, EID | 2016-12-12 09:45 |
Nara | NAIST | Evaluation of the Band Offset at FeS2/NiOx Junction for FeS2-Pyrite Heterojunction Solar Cell Yusuke Kawamura, Yasuaki Ishikawa, Shunsuke Uchiyama (NAIST), Yoshitaro Nose (Kyoto Univ.), Yukiharu Uraoka (NAIST) EID2016-10 SDM2016-91 |
For the purpose of the realization of the FeS2-pyrite heterojunction solar cell, the band alignment of NiOx/FeS2 heteroj... [more] | EID2016-10 SDM2016-91 pp.7-10 |
| SDM, EID | 2016-12-12 10:00 |
Nara | NAIST | Analysis of the cause of high performance IGZO thin film transistor using SrTa2O6 as gate insulator Kento Oikawa, Mami N. Fujii, Juan Paolo Bermundo (NAIST), Kiyoshi Uchiyama (Tsuruoka College), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
[more] | |
| SDM, EID | 2016-12-12 15:45 |
Nara | NAIST | Thermoelectric Properties of amorphous-InGaZnO Thin Film Yuki Tawa, Mutsunori Uenuma, Yuta Fujimoto, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2016-25 SDM2016-106 |
[more] | EID2016-25 SDM2016-106 pp.71-74 |
| EID, SDM | 2015-12-14 11:30 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Memory Application of Ultrafine FET utilizing Supramolecular Protein Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) EID2015-11 SDM2015-94 |
Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm is fabrica... [more] | EID2015-11 SDM2015-94 pp.9-12 |
| EID, SDM | 2015-12-14 13:30 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Unseeded Growth of Poly Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Yoshiaki Nieda, Toru Takao (Nara Inst. of Sci.& Technol.), Masahiro Horita (Kyoto Univ.), Nobuo Sasaki (Japan women's Univ.), Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Sci.& Technol.) |
[more] | |
| CPM, OPE, LQE, R, EMD | 2015-08-27 10:35 |
Aomori | Aomori-Bussankan-Asupamu | Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field... [more] | R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 pp.5-8 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 11:00 |
Aomori | Aomori-Bussankan-Asupamu | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] | R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 pp.9-11 |
| SDM | 2015-06-19 15:50 |
Aichi | VBL, Nagoya Univ. | Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] | SDM2015-52 pp.75-80 |
| SDM, EID | 2014-12-12 14:15 |
Kyoto | Kyoto University | Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] | EID2014-26 SDM2014-121 pp.67-71 |
| SDM, EID | 2014-12-12 17:00 |
Kyoto | Kyoto University | Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-36 SDM2014-131 |
In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power ... [more] | EID2014-36 SDM2014-131 pp.119-123 |
| SDM | 2013-12-13 09:00 |
Nara | NAIST | Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116 |
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] | SDM2013-116 pp.1-5 |
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