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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MI 2022-01-27
Online Online Study on Decomposition of Deformation in Embryonic Development using Graph Fourier Transform
Tomoki Matsuyama, Takuya Funatomi (NAIST), Natsuko Utsunomiya, Shigehito Yamada (Kyoto), Yuki Fujimura, Takahiro Kushida, Yasuhiro Mukaigawa (NAIST) MI2021-83
(To be available after the conference date) [more] MI2021-83
SDM 2018-06-25
Aichi Nagoya Univ. VBL3F XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2018-26
 [more] SDM2018-26
SDM 2017-06-20
Tokyo Campus Innovation Center Tokyo Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-25
 [more] SDM2017-25
CQ 2016-07-27
Osaka The Osaka Umeda Campus, Kwansei Gakuin Univesity Optimization of the retrieval order of statistics information in measuring packet loss rates of all links on OpenFlow
Yuki Fujimura, Yuta Tsukioka, Masato Tsuru (kyutech) CQ2016-45
In recent years, OpenFlow has been attracting much attention as a network technology to support cloud computing and serv... [more] CQ2016-45
SDM 2016-06-29
Tokyo Campus Innovation Center Tokyo XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface
Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] SDM2016-40
SDM 2016-06-29
Tokyo Campus Innovation Center Tokyo Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD
NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41
SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] SDM2016-41
MWP 2015-05-25
Tokyo Kikai-Shinko-Kaikan Bldg. Reduction of phase fluctuation at the beat signal by the lightwave interferometric method -- Novel technique for low phase noise coherent THz-wave generation --
Kazuki Sakuma, Shota Takeuchi, Yuki Fujimura, Jun Haruki, Kazutoshi Kato (Kyushu Univ.), Shintaro Hisatake, Tadao Nagatsuma (Osaka Univ.) MWP2015-5
 [more] MWP2015-5
IPSJ-AVM, CS, IE, ITE-BCT [detail] 2014-12-04
Osaka Osaka University Nakanoshima Center human detection from low quality Aerial images using Deep Learning and Online Learning
Takayuki Fujimura, Daisuke Sugimura (TUS), Fumie Ono, Ryu Miura (NICT), Takayuki Hamamoto (TUS) CS2014-75 IE2014-61
We propose a method for human detection from Aerial Images taken by Unmanned Aerial Vehicle (UAV). In that situations, t... [more] CS2014-75 IE2014-61
ICD 2011-04-19
Hyogo Kobe University Takigawa Memorial Hall A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers
Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe (Toshiba) ICD2011-9
A digitized replica bitline delay technique has been proposed for random-variation-tolerant timing generation of static ... [more] ICD2011-9
ICD 2010-04-22
Kanagawa Shonan Institute of Tech. [Invited Talk] A Configurable SRAM with Constant-Negative-Level Write Buffer for Low Voltage Operation with 0.149μm2 Cell in 32nm High-k Metal Gate CMOS
Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe (Toshiba Corp.) ICD2010-1
This paper presents a configurable SRAM for low voltage operation with Constant-Negative-Level Write Buffer (CNL-WB) and... [more] ICD2010-1
ICD 2009-04-14
Miyagi Daikanso (Matsushima, Miyagi) A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver
Yuki Fujimura, Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe (Toshiba Co.) ICD2009-5
We present a dual-power-supply SRAM with 0.179$\mu$m2 cell in 40nm CMOS, which is 10% smaller than the SRAM scaling tren... [more] ICD2009-5
LQE 2008-12-12
Tokyo Kikai-Shinko-Kaikan Bldg. Modehop-free Wavelength Tuning over 50 nm of Micromechanically Tunable InP-Based VCSELs with Si-MEMS Technology
Tetstuo Yano, Hiroki Saito, Nobuhiko Kanbara, Ryuichirou Noda, Shin-ichirou Tezuka, Naoyuki Fujimura, Masaya Ooyama, Tetsuya Watanabe, Takaaki Hirata (Yokogawa Electric Corporation), Nobuhiko Nishiyama (Tokyo Institute of Technology) LQE2008-129
With aiming at realization of tunable lasers with wide tuning range and fast wavelength modulation required for optical ... [more] LQE2008-129
ICD 2008-04-17
Tokyo   [Invited Talk] A Single-Power-Supply 0.7V 1GHz 45nm SRAM with an Asymmetrical Unit β-ratio Memory Cell
Takahiko Sasaki, Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida (Toshiba Corp.), Akihito Tohata (Toshiba Microelectronics Corp.), Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka (Toshiba Corp.) ICD2008-1
A single-power supply $64kB$ SRAM is fabricated in a $45nm$ bulk CMOS technology. The SRAM operates at $1GHz$ with a $0.... [more] ICD2008-1
Kanagawa YRP Interative Noise Power Estimation of an FFT-Equalizer in Fast Fading Channels
Yuki Fujimura, Satoshi Denno, Yoshiteru Morihiro (Kyoto Univ.)
Frequency domain equalization for single carrier transmission systems has drawn much interest because it achieves superi... [more] RCS2005-185
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