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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-29 15:25 |
Osaka | Osaka City University | Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.)  ED2012-74 CPM2012-131 LQE2012-102 |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] | ED2012-74 CPM2012-131 LQE2012-102 pp.37-40 |
| ED | 2012-07-26 15:00 |
Fukui | Fukui University | Interface characterization of AlInN/GaN heterostructures Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) ED2012-44 |
[more] | ED2012-44 pp.17-20 |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| ED, MW | 2012-01-12 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2011-136 MW2011-159 |
[more] | ED2011-136 MW2011-159 pp.97-100 |
| LQE, ED, CPM | 2011-11-17 13:20 |
Kyoto | Katsura Hall，Kyoto Univ. | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] | ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
| ED | 2011-07-29 14:45 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40 |
[more] | ED2011-40 pp.17-20 |
| CPM, LQE, ED | 2010-11-12 10:00 |
Osaka | Characterization of insulated gates on GaN and AlGaN/GaN structures Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110 |
We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] | ED2010-154 CPM2010-120 LQE2010-110 pp.55-58 |
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| ED, MW | 2010-01-14 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-185 MW2009-168 |
[more] | ED2009-185 MW2009-168 pp.61-64 |
| SDM, ED | 2009-06-25 11:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-74 SDM2009-69 |
[more] | ED2009-74 SDM2009-69 pp.109-112 |
| ED | 2009-06-11 16:00 |
Tokyo | Characterization of ALD-Al2O3/AlGaN/GaN interfaces Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-41 |
[more] | ED2009-41 pp.27-30 |
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