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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE 2013-06-21
Tokyo   Silicon photonics devices on 300 mm wafer fabricated by using ArF immersion lithography
Tomohiro Kita, Yuichiro Tanushi, Masaki Nara, Syu Hirano (Tohoku Univ.), Munehiro Toyama, Miyoshi Seki, Keiji Koshino, Nobuyuki Yokoyama, Minoru Ohtsuka, Akinobu Sugiyama, Eiichi Ishitsuka, Tsukuru Sano, Tsuyoshi Horikawa (AIST), Hirohito Yamada (Tohoku Univ.) OPE2013-7 LQE2013-17
We have investigated optical characteristics of Si photonics devices formed on 300 mm SOI wafers by using ArF immersion ... [more] OPE2013-7 LQE2013-17
SDM 2009-10-29
Miyagi Tohoku University Current Voltage Characteristics of Si-MESFET on SOI Substrate
Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) SDM2009-122
We simulate current-voltage characteristics of scaled Si metal semiconductor field effect transistors (MESFETs) and show... [more] SDM2009-122
SDM 2009-10-30
Miyagi Tohoku University Crystallization of Amorphous Silicon Films on Glass Substrate by Heated Gas Beam Annealing
Yuichiro Tanushi, Yosuke Kawano, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ), Naomi Mura, Kimihisa Yamakami, Yuji Furumura (Philtech Inc.), Takashi Ito (Tohoku Univ) SDM2009-128
For a new novel method to crystallize amorphous silicon films on glass substrate, heated gas beam annealing method is pr... [more] SDM2009-128
OPE 2007-12-14
Tokyo Kikai-Shinko-Kaikan Bldg. Electric-Field Drive Optical Modulator Using Si Ring Resonator
Tomohiro Tokunaga, Yuichiro Tanushi, Yoshiteru Amemiya, Shin Yokoyama (Hiroshima Univ.)
Multimode Si ring resonators (20um in diameter and resonance wavelength of 1500nm) were fabricated on SOI wafers. The wa... [more] OPE2007-143
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