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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-12-13
17:20
Nara NAIST Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] SDM2013-133
pp.101-105
SDM 2008-12-05
14:30
Kyoto Kyoto University, Katsura Campus, A1-001 Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) SDM2008-191
4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have bee... [more] SDM2008-191
pp.37-41
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