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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-06-18
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties
Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47
 [more] SDM2013-47
pp.19-23
SDM, ED
(Workshop)
2012-06-27
11:30
Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
SDM 2011-07-04
10:40
Aichi VBL, Nagoya Univ. Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy
Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) SDM2011-54
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations has been investigated by real-tim... [more] SDM2011-54
pp.23-27
SDM 2008-06-10
12:45
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53
The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] SDM2008-53
pp.65-70
SDM 2006-06-22
09:00
Hiroshima Faculty Club, Hiroshima Univ. Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation -- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT)
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigat... [more] SDM2006-52
pp.61-63
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