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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2019-05-16
16:15
Shizuoka Shizuoka Univ. (Hamamatsu) Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] ED2019-16 CPM2019-7 SDM2019-14
pp.29-34
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