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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-10-17
11:10
Miyagi Niche, Tohoku Univ. Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow ... [more]
SDM2014-91
pp.41-45
CPM 2013-08-01
13:50
Hokkaido   GaAsN Solar Cell for Super High Efficient Multijunction Solar Cell
Kazuma Ikeda, Nobuaki Kojima, Yoshio Oshita, Masafumi Yamaguchi (Toyota Technological Inst.) CPM2013-40
The carrier mobility and lifetime of GaAsN which have been considered to be determined by N composition were improved by... [more] CPM2013-40
pp.7-10
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