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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2008-05-16
15:05
Aichi Nagoya Institute of Technology Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method
Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] ED2008-20 CPM2008-28 SDM2008-40
pp.95-100
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