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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-01-27
11:15		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High-performance tri-gate poly-Ge Junction-less p- and n-MOSFETs Fabricated by Flash Lamp Annealing Process
Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta, Takahiro Mori, Masahiro Koike, Tsutomu Tezuka (AIST) SDM2014-138		 Poly-crystalline Ge (poly-Ge) layer can be candidate for the channel of stacking 3D-CMOS from the viewpoint of low-therm... [more] SDM2014-138
pp.13-16
SDM 2009-06-19
12:40		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Thermal Stability of Ge MOS Devices -- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption --
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) SDM2009-31		 GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the ... [more] SDM2009-31
pp.27-31
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