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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2010-01-14
14:05		 Tokyo Kikai-Shinko-Kaikan Bldg Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs
Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169		 Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] ED2009-186 MW2009-169
pp.65-70
LQE, ED, CPM 2008-11-28
11:40		 Aichi Nagoya Institute of Technology Device simulation of HfO2/AlGaN/GaN MOSFET -- effects of HfO2/AlGaN interface --
Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119		 Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] ED2008-175 CPM2008-124 LQE2008-119
pp.115-120
LQE, ED, CPM 2008-11-28
13:05		 Aichi Nagoya Institute of Technology Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD
Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-176 CPM2008-125 LQE2008-120		 The AlGaN/GaN MOSFETs with HfO2 as a gate insulator deposited by ALD has been fabricated and characterized. The lower th... [more] ED2008-176 CPM2008-125 LQE2008-120
pp.121-124
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