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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-12-13
09:00		 Nara NAIST Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116		 In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] SDM2013-116
pp.1-5
SDM 2012-12-07
13:30		 Kyoto Kyoto Univ. (Katsura) Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125		 Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-S... [more] SDM2012-125
pp.59-64
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