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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2014-08-01
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56		 Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] ED2014-56
pp.19-24
ED 2011-12-14
13:00		 Miyagi Tohoku University [Invited Talk] High current density of InGaAs MOSFET
Yasuyuki Miyamoto, Yoshiharu Yonai, Toru Kanazawa (Tokyo Tech) ED2011-100		 ITRS requests drain current over 2A/mm at supplied voltage of 0.6 V in future MOSFET. To realize required high drivabili... [more] ED2011-100
pp.1-6
MW, ED 2011-01-14
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148		 III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] ED2010-188 MW2010-148
pp.69-73
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