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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-11-14
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing
Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) SDM2013-102		 Sulfur doping at NiSi/Si junction has been found to make a Schottky barrier height ultimately small, revealing almost ze... [more] SDM2013-102
pp.15-20
SDM, ICD 2013-08-01
09:50		 Ishikawa Kanazawa University Scaling Strategy for Low Power RF Applications with Multi Gate Oxide Dual Work function (DWF) MOSFETs Utilizing Self-Aligned Integration Scheme
Toshitaka Miyata, Shigeru Kawanaka, Akira Hokazono, Tatsuya Ohguro, Yoshiaki Toyoshima (TOSHIBA) SDM2013-67 ICD2013-49		 Dual Work Function (DWF)-MOSFET of 100 nm gate length device with self-aligned integration scheme was demonstrated utili... [more] SDM2013-67 ICD2013-49
pp.13-18
SDM 2013-02-04
11:25		 Tokyo Kikai-Shinko-Kaikan Bldg. *
Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) 		 [more]
SDM, ICD 2011-08-25
10:50		 Toyama Toyama kenminkaikan Plasma Doping and Laser Spike Annealing Technique for Steep SDE Formation in nano-scale MOSFET
Emiko Sugizaki, Toshitaka Miyata, Yasunori Oshima, Akira Hokazono, Kanna Adachi, Kiyotaka Miyano, Hideji Tsujii, Shigeru Kawanaka, Satoshi Inaba, Takaharu Itani, Toshihiko Iinuma, Yoshiaki Toyoshima (Toshiba) SDM2011-75 ICD2011-43		 The importance of impurity profile design for Source/Drain Extension (SDE) is widely recognized for deeply scaled MOSFET... [more] SDM2011-75 ICD2011-43
pp.23-27
SDM 2009-11-13
11:15		 Tokyo Kikai-Shinko-Kaikan Bldg. A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects
Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145		 Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] SDM2009-145
pp.55-60
ICD, SDM 2009-07-16
15:50		 Tokyo Tokyo Institute of Technology The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23		 The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] SDM2009-107 ICD2009-23
pp.53-56
ICD, SDM 2008-07-18
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57		 We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] SDM2008-147 ICD2008-57
pp.109-114
SDM, VLD 2007-10-30
14:10		 Tokyo Kikai-Shinko-Kaikan Bldg. Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs
Hideji Tsujii, Akira Hokazono, Makoto Fujiwara, Shigeru Kawanaka, Atsushi Azuma, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) VLD2007-56 SDM2007-200		  [more] VLD2007-56 SDM2007-200
pp.27-32
SDM 2007-06-08
09:50		 Hiroshima Hiroshima Univ. ( Faculty Club) Modeling of NBTI Degradation for SiON pMOSFET
Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41		 For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] SDM2007-41
pp.55-58
 Results 1 - 9 of 9  /   
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