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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-07-02
16:15
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] ED2010-122 SDM2010-123
pp.319-324
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