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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, LSJ 2018-05-25
Fukui   Fabrication of nanocavity Raman silicon laser on (100) SOI substrate with a 45 degree rotated top Si layer
Yukiko Yamauchi (Osaka Pre Univ.), Makoto Okano (AIST), Susumu Noda (Kyoto Univ.), Yasushi Takahashi (Osaka Pre Univ.) LQE2018-14
We have developed silicon Raman lasers based on a high quality-factor (Q) photonic crystal nanocavity which has a potent... [more] LQE2018-14
PN, EMT, LQE, OPE, MWP, EST, IEE-EMT [detail] 2013-01-25
Osaka Osaka Univ. (Suita) Raman amplifier devices using photonic crystal high-Q nanocavities
Yasushi Takahashi (Osaka Pref. Univ.), Yoshitaka Inui, Takashi Asano, Susumu Noda (Kyoto Univ.) PN2012-65 OPE2012-174 LQE2012-166 EST2012-101 MWP2012-83
 [more] PN2012-65 OPE2012-174 LQE2012-166 EST2012-101 MWP2012-83
OPE, EMT, LQE, PN 2007-01-29
Osaka Osaka Univ. Convention Center Resonant modes in high-Q multistep heterostructure nanocavities
Yasushi Takahashi, Yoshinori Tanaka, Takashi Asano, Susumu Noda (Kyoto Univ.) PN2006-51 OPE2006-133 LQE2006-122
 [more] PN2006-51 OPE2006-133 LQE2006-122
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