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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, OPE, CPM, EMD, R |
2019-08-22 16:45 |
Miyagi |
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[Invited Talk]
3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] |
R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 pp.35-38 |
ICD |
2017-04-21 13:25 |
Tokyo |
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[Invited Lecture]
Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16 |
In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] |
ICD2017-16 pp.85-88 |
ICD, SDM, ITE-IST [detail] |
2016-08-03 10:40 |
Osaka |
Central Electric Club |
[Invited Talk]
Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction Kamimuta Yuuichi, Shosuke Fujii, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) SDM2016-62 ICD2016-30 |
[more] |
SDM2016-62 ICD2016-30 pp.95-98 |
SDM |
2016-06-29 10:00 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32 |
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] |
SDM2016-32 pp.1-4 |
SDM |
2006-06-22 10:55 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Realization of SiON films with small ΔVfb Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Shoko Kikuchi, Kiwamu Sakuma, Yuichiro Mitani (toshiba R&D center), Mariko Takayanagi, Kazuhiro Eguchi (Semiconductor Company) |
[more] |
SDM2006-56 pp.81-86 |
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