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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2011-01-14 11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Developing GaN HEMTs for Ka-Band with 20W Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2010-186 MW2010-146 |
(To be available after the conference date) [more] |
ED2010-186 MW2010-146 pp.61-64 |
CPM, ED, LQE |
2007-10-12 12:05 |
Fukui |
Fukui Univ. |
Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] |
ED2007-172 CPM2007-98 LQE2007-73 pp.81-84 |
MW, ED |
2007-01-19 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Over 80W Output Power X-band AlGaN/GaN HEMT Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] |
ED2006-238 MW2006-191 pp.209-212 |
ED, CPM, LQE |
2006-10-05 13:00 |
Kyoto |
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X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] |
ED2006-152 CPM2006-89 LQE2006-56 pp.1-5 |
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