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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
WPT 2020-03-07
(Cancelled but technical report was issued)
Wireless Connection Using 5.8 GHz Open-ring resonators and its Application to Wave Guide Power Distribution
Yasuo Ohno, Hiroko Itoh (Laser Systems) WPT2019-79
Using the filter theory, the importance of external Q is explained in resonant power transmission using open ring resona... [more] WPT2019-79
WPT 2019-12-11
Tokyo Kikai-Shinko-Kaikan Bldg. Misalignment Tolerance Improvement by kQ-product Theory for Open-Ring Resonator Non-contact Power Transmission
Yasuo Ohno, Hirok Itoh (Laser Systems) WPT2019-48
Resonance power transmission system using microwave open ring resonators is light weight and small. So, it is suitable f... [more] WPT2019-48
Shiga Ryukoku Extension Center, Ryukoku University Open-Ring Resonator Coupling for 920 MHz-Band Wireless Power Transmission System
Yasuo Ohno, Hiroko Itoh (Laser Systems) WPT2019-28
Microwave resonant power transmission using open-ring resonators is reported. The open-ring resonator is a ring-shaped λ... [more] WPT2019-28
ED 2016-01-20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission
Yasuo Ohno (LaS) ED2015-117
GaN based electron devices have high potential for high frequency, high power applications, but applications with high i... [more] ED2015-117
ED, MW 2014-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. 2D Device Simulation of AlGaN/GaN HFETs Side-Gating Effect
Yusuke Ikawa (Univ. of Tokushima), Keunsam Lee (Nihon Synopsys), Jin-Ping Ao (Univ. of Tokushima), Yasuo Ohno (e-Device) ED2013-118 MW2013-183
 [more] ED2013-118 MW2013-183
ED 2012-07-26
Fukui Fukui University Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET
Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.) ED2012-42
 [more] ED2012-42
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] ED2011-82 CPM2011-131 LQE2011-105
Kanagawa Kanagawa Womens Center Microwave Power Transmission Using Open-Ring Resonator Coupling and GaN SBD
Kenji Harauchi, Yuichi Iwasaki, Kohei Hayashino, Jin-Ping Ao (Univ.Tokushima), Naoki Shinohara (Kyoto Univ.), Hiroshi Tonomura (UD Trucks), Yasuo Ohno (Univ.Tokushima)
Experiments on wireless power transmission by microwave are carried out to develop the battery charging of mobile equip... [more]
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] ED2009-151 CPM2009-125 LQE2009-130
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution
Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.) ED2009-158 CPM2009-132 LQE2009-137
For microwave power rectification circuits(rectenna), high power, high conversion efficiency and compact size rectifying... [more] ED2009-158 CPM2009-132 LQE2009-137
ED 2009-07-30
Osaka Osaka Univ. Icho-Kaikan Current Control of Open-Gate AlGaN/GaN HFET via Electrolyte
Kenji Nozaki, Yoshiya Takahashi, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ.) ED2009-107
(To be available after the conference date) [more] ED2009-107
SDM 2008-06-09
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo [Tutorial Lecture] Development History of Compound Semiconductor Electron Devices
Yasuo Ohno (Tokushima Univ.) SDM2008-43
Compound semiconductor devices has been expected as future electron devices exceeding the performances of conventional s... [more] SDM2008-43
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