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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-10-27
10:00
Miyagi Niche, Tohoku Univ. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] SDM2016-73
pp.27-30
SDM 2015-10-30
15:30
Miyagi Niche, Tohoku Univ. Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-83
 [more] SDM2015-83
pp.63-68
SDM 2013-10-18
09:30
Miyagi Niche, Tohoku Univ. Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) SDM2013-92
 [more] SDM2013-92
pp.21-25
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