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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-02-07
14:30
Tokyo   [Invited Talk] Single Crystal Al Interconnects formed on p-GaN and their Application to GaN FET
Takeshi Harada, Koji Utaka, Yusuke Kand, Katsuhiko Onishi, Keiichi Matsunaga, Masahiro Hikita, Yasuhiro Uemoto (Panasonic) SDM2018-95
 [more] SDM2018-95
pp.19-22
MW, ED 2017-01-26
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] ED2016-96 MW2016-172
pp.1-5
MW, ED 2009-01-14
15:25
Tokyo Kikai-Shinko-Kaikan Bldg GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] ED2008-202 MW2008-167
pp.23-27
SDM, ED 2008-07-11
10:50
Hokkaido Kaderu2・7 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
ED, MW 2008-01-16
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita)
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more]
MW, ED 2007-01-19
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] ED2006-235 MW2006-188
pp.193-197
ED, SDM, R 2006-11-24
16:30
Osaka Central Electric Club Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic)
 [more] R2006-38 ED2006-183 SDM2006-201
pp.39-42
ED, CPM, LQE 2006-10-05
14:40
Kyoto   GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] ED2006-156 CPM2006-93 LQE2006-60
pp.23-27
MW, ED 2005-11-17
13:35
Saga   A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer
Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric)
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] ED2005-165 MW2005-120
pp.39-43
MW, ED 2005-01-18
09:20
Tokyo   -
Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.)
In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] ED2004-212 MW2004-219
pp.1-5
MW, ED 2005-01-18
10:10
Tokyo   -
Tomohiro Murata, Masahiro Hikita, Yutaka Hirose, Kaoru Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric)
 [more] ED2004-214 MW2004-221
pp.13-17
 Results 1 - 12 of 12  /   
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