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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
RECONF 2010-09-17
09:25
Shizuoka Shizuoka University (Faculty of Eng., Hall 2) COGRE: A Novel Compact Logic Cell Architecture for Area Reduction
Yasuhiro Okamoto, Yoshihiro Ichinomiya, Motoki Amagasaki, Masahiro Iida, Toshinori Sueyoshi (Kumamoto Univ.) RECONF2010-31
In order to implement logic functions, conventional field programmable gate arrays (FPGAs) adopt look-up tables (LUTs) a... [more] RECONF2010-31
pp.79-84
RECONF 2010-09-17
09:50
Shizuoka Shizuoka University (Faculty of Eng., Hall 2) An Error Detect and Correct Circuit Based Fault-tolerant Reconfigurable Logic Device
Qian Zhao, Yoshihiro Ichinomiya, Yasuhiro Okamoto, Motoki Amagasaki, Masahiro Iida, Toshinori Sueyoshi (Kumamoto Univ.) RECONF2010-32
As the size of integrated circuit has reached the nanoscale, embedded memories are more sensitive to single event upset ... [more] RECONF2010-32
pp.85-90
IPSJ-SLDM, VLD, CPSY, RECONF [detail] 2010-01-26
14:55
Kanagawa Keio Univ (Hiyoshi Campus) Design of Reconfigurable Logic Device based on Variable Grain Logic Cell
Kazuki Inoue, Yasuhiro Okamoto, Qian Zhao, Komei Yoshizawa, Hiroki Yosho, Masahiro Koga, Motoki Amagasaki, Masahiro Iida, Morihiro Kuga, Toshinori Sueyoshi (Kumamoto Univ.) VLD2009-79 CPSY2009-61 RECONF2009-64
We propose a variable grain logic cell(VGLC)architecture. Its key feature is variable granularity which helps to create ... [more] VLD2009-79 CPSY2009-61 RECONF2009-64
pp.59-64
ED, MW 2010-01-14
15:30
Tokyo Kikai-Shinko-Kaikan Bldg A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity
Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.) ED2009-189 MW2009-172
In this paper, we successfully demonstrate a recessed gate normally-off AlGaN/GaN HFET on a silicon substrate with high ... [more] ED2009-189 MW2009-172
pp.81-85
ED, MW 2008-01-16
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. CW 20-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications
Yasuhiro Murase, Akio Wakejima, Takashi Inoue, Katsumi Yamanoguchi, Masahiro Tanomura, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Yuji Ando, Naotaka Kuroda, Kohji Matsunaga, Hironobu Miyamoto (FED) ED2007-212 MW2007-143
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than... [more] ED2007-212 MW2007-143
pp.33-38
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