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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2008-05-16
13:40
Aichi Nagoya Institute of Technology Iodine doping of CdTe Layers on Si Substrates Grown by MOVPE ( I )
Akinobu Watanabe, Yasuhiro Kai, Wataru Yamada, Hatasu Ichihashi, Tomohiro Yoneyama, Daisuke Kato, Kazuya Matsumoto, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.) ED2008-17 CPM2008-25 SDM2008-37
Iodine doping of CdTe layers grown on Si substrates by metal-organic vapor phase epitaxy has been studied using ethyliod... [more] ED2008-17 CPM2008-25 SDM2008-37
pp.81-84
CPM, ED, SDM 2008-05-16
14:05
Aichi Nagoya Institute of Technology Iodine doping of CdTe Layers Grown on Si Substrates by MOVPE(II)
Hatasu Ichihashi, Wataru Yamada, Yasuhiro Kai, Akinobu Watanabe, Tomoya Nakanishi, Hiroki Oka, Hajime Nakashima, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.) ED2008-18 CPM2008-26 SDM2008-38
Growth characteristics of high resistive CdTe layers by metal-organic vapor phase epitaxy have been studied. Layers were... [more] ED2008-18 CPM2008-26 SDM2008-38
pp.85-88
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