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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2017-11-07
13:00
Kumamoto Kumamoto-Kenminkouryukan Parea Calculation method of exponential function on FPGAs using high-radix STL method
Yasufumi Fujiwara, Kazuyoshi Takagi, Naofumi Takagi (Kyoto Univ.) RECONF2017-46
We propose the calculation method of double precision floating point exponential function for FPGA with correct rounding... [more] RECONF2017-46
pp.55-59
CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] 2017-03-10
14:50
Okinawa Kumejima Island Double-precision floating-point logarithm calculation method for FPGA
Yasufumi Fujiwara, Kazuyoshi Takagi, Naofumi Takagi (Kyoto Univ.) CPSY2016-156 DC2016-102
Floating-point arithmetic standard IEEE 754 was revised in 2008, and it presents 36 functions that should be calculated ... [more] CPSY2016-156 DC2016-102
pp.363-367
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-18
11:00
Mie Iseshi Kanko Bunka Kaikan Interaction between Er luminescent centers and nanocavities in GaAs-based photonic crystals
Takanori Kojima, Kanji Sakuragi, Masayuki Ogawa, Natsuki Fujioka, Yasufumi Fujiwara (Osaka Univ.) PN2016-43 EMT2016-72 OPE2016-118 LQE2016-107 EST2016-82 MWP2016-56
(To be available after the conference date) [more] PN2016-43 EMT2016-72 OPE2016-118 LQE2016-107 EST2016-82 MWP2016-56
pp.9-12
LQE, ED, CPM 2014-11-28
15:35
Osaka   Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity
Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2014-95 CPM2014-152 LQE2014-123
Enhancement of Eu-related luminescence intensity in Eu,O-codoped GaN (GaN:Eu,O) was demonstrated by embedding a GaN:Eu,O... [more] ED2014-95 CPM2014-152 LQE2014-123
pp.107-110
CPM, LQE, ED 2013-11-29
09:30
Osaka   OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] ED2013-77 CPM2013-136 LQE2013-112
pp.63-66
CPM, LQE, ED 2013-11-29
09:55
Osaka   Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-78 CPM2013-137 LQE2013-113
 [more] ED2013-78 CPM2013-137 LQE2013-113
pp.67-70
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