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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)
2012-06-27
14:15
Okinawa Okinawa Seinen-kaikan Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field
Do-Bin Kim, Yoon Kim, Se Hwan Park, Wandong Kim, Joo Yun Seo, Seung-Hyun Kim, Byung-Gook Park (Seoul National Univ.)
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrappin... [more]
ED, SDM 2010-06-30
15:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59
 [more] ED2010-58 SDM2010-59
pp.37-40
SDM, ED 2009-06-26
10:00
Overseas Haeundae Grand Hotel, Busan, Korea Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91
 [more] ED2009-96 SDM2009-91
pp.197-200
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