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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-01-29
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side
ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] SDM2013-136
pp.5-8
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