IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2015-08-24
15:00		 Kumamoto Kumamoto City [Invited Talk] Recent progress and challenges of high-mobility III-V/Ge CMOS technologies for low power LSI applications
Toshifumi Irisawa (AIST), Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Tsutomu Tezuka (AIST/Toshiba), Tatsurou Maeda, Hiroyuki Ota, Kazuhiko Endo (AIST) SDM2015-63 ICD2015-32		  [more] SDM2015-63 ICD2015-32
pp.31-36
SDM 2015-01-27
11:15		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High-performance tri-gate poly-Ge Junction-less p- and n-MOSFETs Fabricated by Flash Lamp Annealing Process
Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta, Takahiro Mori, Masahiro Koike, Tsutomu Tezuka (AIST) SDM2014-138		 Poly-crystalline Ge (poly-Ge) layer can be candidate for the channel of stacking 3D-CMOS from the viewpoint of low-therm... [more] SDM2014-138
pp.13-16
SDM 2014-01-29
10:25		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137		 riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
SDM 2012-06-21
16:55		 Aichi VBL, Nagoya Univ. Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability
Toshifumi Irisawa, Minoru Oda, Tsutomu Tezuka (AIST) SDM2012-60		 Thickness controllability and thermal stability of Ni-InGaAs alloyed contact have been investigated with the aim of the ... [more] SDM2012-60
pp.93-96
SDM 2009-06-19
12:40		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Thermal Stability of Ge MOS Devices -- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption --
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) SDM2009-31		 GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the ... [more] SDM2009-31
pp.27-31
 Results 1 - 5 of 5  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan