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 Results 1 - 20 of 31  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, SDM, ITE-IDY [detail] 2020-12-02
15:00
Online Online Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes.
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] EID2020-11 SDM2020-45
pp.42-45
SDM, ED, CPM 2017-05-26
09:55
Aichi VBL, Nagoya University Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] ED2017-24 CPM2017-10 SDM2017-18
pp.51-54
CPM, LQE, ED 2016-12-12
14:40
Kyoto Kyoto University Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] ED2016-61 CPM2016-94 LQE2016-77
pp.21-26
SDM, EID 2016-12-12
14:45
Nara NAIST Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC
Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103
In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes suppl... [more] EID2016-22 SDM2016-103
pp.59-62
EID, SDM 2015-12-14
11:45
Kyoto Ryukoku University, Avanti Kyoto Hall Distribution of Forming Characteristics in NiO-based ReRAM
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) EID2015-12 SDM2015-95
 [more] EID2015-12 SDM2015-95
pp.13-17
SDM, EID 2014-12-12
10:00
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
SDM, EID 2014-12-12
10:15
Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
pp.7-11
SDM, EID 2014-12-12
16:45
Kyoto Kyoto University Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] EID2014-35 SDM2014-130
pp.115-118
SDM, EID 2014-12-12
17:30
Kyoto Kyoto University Resistive switching characteristics of NiO-based ReRAM after semi-forming process.
Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133
In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] EID2014-38 SDM2014-133
pp.129-134
SDM 2013-12-13
16:40
Nara NAIST Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] SDM2013-131
pp.91-96
SDM 2013-12-13
17:20
Nara NAIST Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] SDM2013-133
pp.101-105
SDM 2013-06-18
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Implementation of High-k Gate Dielectrics in SiC Power MOSFET
Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59
 [more] SDM2013-59
pp.77-80
SDM 2012-12-07
10:00
Kyoto Kyoto Univ. (Katsura) Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] SDM2012-115
pp.1-5
SDM 2012-12-07
16:45
Kyoto Kyoto Univ. (Katsura) Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures
Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) SDM2012-137
We have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of ... [more] SDM2012-137
pp.129-132
SDM 2011-12-16
11:00
Nara NAIST Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] SDM2011-135
pp.17-21
SDM 2011-12-16
16:20
Nara NAIST Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] SDM2011-146
pp.77-82
SDM 2011-12-16
17:00
Nara NAIST Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-148
 [more] SDM2011-148
pp.87-92
LQE, ED, CPM 2011-11-17
10:05
Kyoto Katsura Hall,Kyoto Univ. AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] ED2011-73 CPM2011-122 LQE2011-96
pp.1-4
LQE, ED, CPM 2011-11-17
14:50
Kyoto Katsura Hall,Kyoto Univ. Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-81 CPM2011-130 LQE2011-104
 [more] ED2011-81 CPM2011-130 LQE2011-104
pp.39-42
SDM 2010-12-17
10:00
Kyoto Kyoto Univ. (Katsura) Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] SDM2010-185
pp.1-6
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