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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2017-04-21
13:25		 Tokyo   [Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)
Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16		 In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] ICD2017-16
pp.85-88
ICD, SDM, ITE-IST [detail] 2016-08-03
10:40		 Osaka Central Electric Club [Invited Talk] Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction
Kamimuta Yuuichi, Shosuke Fujii, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) SDM2016-62 ICD2016-30		  [more] SDM2016-62 ICD2016-30
pp.95-98
SDM 2016-06-29
10:00		 Tokyo Campus Innovation Center Tokyo [Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32		 We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] SDM2016-32
pp.1-4
ICD, SDM 2005-08-19
10:00		 Hokkaido HAKODATE KOKUSAI HOTEL [Special Invited Talk] HfSiON -- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue --
Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) 		The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] SDM2005-146 ICD2005-85
pp.19-24
 Results 1 - 4 of 4  /   
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