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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2017-11-30
15:25
Aichi Nagoya Inst. tech. Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate
Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] ED2017-53 CPM2017-96 LQE2017-66
pp.19-22
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