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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 6件中 1~6件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] SDM2019-30
pp.23-27
SDM 2012-10-25
15:20
Miyagi Tohoku Univ. (Niche) Chemical structures of compositional transition layer at SiO2/Si(100) interface
Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2012-89
 [more] SDM2012-89
pp.1-4
SDM 2012-06-21
15:05
Aichi VBL, Nagoya Univ. Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] SDM2012-56
pp.69-74
SDM 2011-10-21
10:15
Miyagi Tohoku Univ. (Niche) Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2011-105
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] SDM2011-105
pp.49-52
SDM 2010-10-22
14:50
Miyagi Tohoku University Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] SDM2010-167
pp.61-65
SDM 2009-10-30
15:45
Miyagi Tohoku University Study on compositional transition layers at SiO2/Si interface formed by radical oxidation
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] SDM2009-134
pp.77-80
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