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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2013-11-28
10:35		 Osaka   High-Power Operation and Applications of InGaN Laser Diode
Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic) ED2013-64 CPM2013-123 LQE2013-99		 We have developed the watt-class blue-violet laser diode array for the applications to data projector and automotive lig... [more] ED2013-64 CPM2013-123 LQE2013-99
pp.1-4
CPM, SDM, ED 2011-05-19
15:40		 Aichi Nagoya Univ. (VBL) MOCVD growth of GaN on graphite substrates
Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27		 We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] ED2011-14 CPM2011-21 SDM2011-27
pp.67-70
MW, ED 2009-01-16
10:20		 Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185		 AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] ED2008-220 MW2008-185
pp.125-128
ED, CPM, LQE 2006-10-06
14:30		 Kyoto   Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor
Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric) 		 [more] ED2006-170 CPM2006-107 LQE2006-74
pp.97-101
ED, MW 2006-01-19
11:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.) 		 [more] ED2005-202 MW2005-156
pp.17-21
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