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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2007-06-08
09:50		 Hiroshima Hiroshima Univ. ( Faculty Club) Modeling of NBTI Degradation for SiON pMOSFET
Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41		 For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] SDM2007-41
pp.55-58
SDM, VLD 2006-09-26
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) 		We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] VLD2006-43 SDM2006-164
pp.25-29
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