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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE | 2010-12-17 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3μm 25.8Gbps direct modulation of BH AlGaInAs DFB lasers for low driving current Go Sakaino, Toru Takiguchi, Yohei Hokama, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa, Eitaro Ishimura, Akihiro Shima (Mitsubishi Electric Corp. HOW)  LQE2010-119 |
1.3µm-band BH AlGaInAs short cavity DFB lasers are fabricated with p-InP substrate for 100GbE (25Gbps x 4 waveleng... [more] | LQE2010-119 pp.23-26 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 16:00 |
Kyoto | 1.3μm-25/43Gbps EML with tensile-strained asymmetric QW absorption layer Takeshi Saito, Takeshi Yamatoya, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2009-44 OPE2009-182 LQE2009-164 |
We demonstrate 1.3µm-25 / 43Gbps EML with novel tensile-strained asymmetric quantum well absorption layer. Clear ey... [more] | PN2009-44 OPE2009-182 LQE2009-164 pp.53-56 |
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| OPE, LQE, OCS | 2009-10-23 16:55 |
Fukuoka | High-power RF InGaAs/InP p-i-n PD Shigetaka Itakura, Kiyohide Sakai, Eitaro Ishimura, Masaharu Nakaji, Toshitaka Aoyagi, Yoshihito Hirano (Mitsubishi Electric Corp.) OCS2009-80 OPE2009-146 LQE2009-105 |
We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, an... [more] | OCS2009-80 OPE2009-146 LQE2009-105 pp.191-195 |
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| OPE, LQE, OCS | 2009-10-23 17:20 |
Fukuoka | The development of 25Gbps pin-PD for 100Gbps Ethernet Ryota Takemura, Masaharu Nakaji, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi electric) OCS2009-81 OPE2009-147 LQE2009-106 |
We fabricated a surface-illuminated pin-PD for 100Gbps Ethernet. This pin-PD with a 15$\mu$m-diameter has a 3dB bandwidt... [more] | OCS2009-81 OPE2009-147 LQE2009-106 pp.197-200 |
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| OPE, EMT, MW | 2009-07-30 13:25 |
Hokkaido | Asahikawa Civic Culture Hall | High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which r... [more] | MW2009-35 OPE2009-35 pp.31-34 |
| IA | 2009-01-28 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Wide Dynamic Range Wavelength Converter Atsushi Sugitatsu, Toshiharu Miyahara, Nobuo Ohata, Eitaro Ishimura, Takeshi Saito, Takeshi Yamatoya, Toshitaka Aoyagi (Mitsubishi/OITDA), Yasuhiko Arakawa (Univ. of Tokyo) IA2008-55 |
We develop the wide dynamic range wavelength converter, which is a part of the project "Development of Next-generation H... [more] | IA2008-55 pp.45-47 |
| OCS, LQE, OPE | 2008-10-23 09:25 |
Fukuoka | Kyushu Univ. | High-current InGaAs pin-PD for Microwave output Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60 |
For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP la... [more] | OCS2008-48 OPE2008-91 LQE2008-60 pp.7-10 |
| LQE, CPM, EMD, OPE | 2008-08-29 10:55 |
Miyagi | Touhoku Univ. | The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] | EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
| LQE, OPE, OCS | 2007-11-01 10:50 |
Fukuoka | Highly reliable guardring-free planar InAlAs avalanche photodiode Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84 |
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] | OCS2007-43 OPE2007-98 LQE2007-84 pp.19-22 |
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| OPE, EMT, LQE, PN | 2007-01-29 13:50 |
Osaka | Osaka Univ. Convention Center | Waveguide photodiode for 40Gbps optical comunication Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2006-55 OPE2006-137 LQE2006-126 |
[more] | PN2006-55 OPE2006-137 LQE2006-126 pp.45-48 |
| OPE, LQE | 2006-06-30 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of 40G bit/s NRZ All-optical Wavelength Converter Module Tatsuo Hatta, Toshiharu Miyahara, Yasunori Miyazaki, Kazuhisa Takagi, Keisuke Matsumoto, Toshitaka Aoyagi (Mitsubishi Electric), Ken Mishina, Akihiro Maruta, Ken-ichi Kitayama (Osaka Univ.) |
All-optical switching node is an ideal solution for next generation wavelength-division-multiplexing network. All-optica... [more] | OPE2006-20 LQE2006-24 pp.25-30 |
| LQE | 2005-05-19 11:20 |
Ishikawa | Kanazawa Univ. | High-power low-chirp EAM-LD for 10Gbps-80km transmission Yasunori Miyazaki, Takeshi Yamatoya, Keisuke Matsumoto, Toshitaka Aoyagi, Takashi Nishimura (Mitsubishi Electric Corp.) |
We present a 10Gbps electroabsorption modulator integrated laser diode (EAM-LD) with wavelength chirp reduced even under... [more] | LQE2005-4 pp.13-16 |
| PN, OPE, OFT, LQE | 2005-01-27 13:00 |
Osaka | Osaka University | [Invited Talk]
Development of monolithically integrated optical wavelength converter Toshiharu Miyahara, Tatsuo Hatta, Kazuhisa Takagi, Keisuke Matsumoto, Toshitaka Aoyagi, Satoshi Nishikawa, Tetsuya Nishimura, Kuniaki Motoshima (Mitsubishi Electric) |
An all-optical wavelength converter is one of the key devices for photonic networks. The wavelength converter using semi... [more] | PN2004-90 OFT2004-96 OPE2004-197 LQE2004-144 pp.21-26 |
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