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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-11-15
13:00
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] High Performance SiC Power Devices and Modules -- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) SDM2012-100
Ultra-small power modules with high temperature operation are realized by using low-Ron SiC trench MOSFET. [more] SDM2012-100
pp.9-10
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