IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-10-29
Miyagi Niche, Tohoku Univ. Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi) SDM2015-74
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2015-74
SDM 2014-10-16
Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
SDM 2014-10-17
Miyagi Niche, Tohoku Univ. Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] SDM2014-93
SDM 2013-10-18
Miyagi Niche, Tohoku Univ. Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] SDM2013-98
 Results 1 - 4 of 4  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan