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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:00
Shizuoka Shizuoka Univ. (Hamamatsu) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] ED2019-39 CPM2019-58 LQE2019-82
pp.29-32
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
11:15
Osaka Osaka University Nakanoshima Center InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Masahiro Uemukai, So Kusumoto, Daiki Tazuke (Osaka Univ.), Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue (Toshiba), Ryuji Katayama (Osaka Univ.) PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion ... [more] PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
pp.243-246
ED, LQE, CPM 2018-11-29
14:15
Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
pp.13-16
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