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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2013-11-29
16:40
Osaka   Evaluation of unwanted radiated emission from GaN-HEMT switching circuit
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2013-89 CPM2013-148 LQE2013-124
The radiated emission from the GaN-HEMT switching converter is investigated by two-dimensional electromagnetic-probe sca... [more] ED2013-89 CPM2013-148 LQE2013-124
pp.117-120
LQE, ED, CPM 2011-11-17
16:05
Kyoto Katsura Hall,Kyoto Univ. High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107
GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] ED2011-84 CPM2011-133 LQE2011-107
pp.55-60
LQE, OPE 2005-06-24
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication of InP-based semiconductor photonic crystal by HI-based ICP etching
Kengo Nozaki, Junichi Hashimoto, Toshihide Ide, Eiichi Mizuta, Masahiro Shiga, Toshihiko Baba (Yokohama Nat'l Univ.)
We successfully formed the photonic crystal consisting of airholes with smooth sidewalls and high aspect ratio into GaIn... [more] OPE2005-15 LQE2005-14
pp.7-10
LQE 2004-12-03
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Room Temperature Lasing Characteristics in InAs Quantum-Dot Microdisk
Toshihide Ide, Toshihiko Baba (Yokohama Nat'l Univ.), Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa (Univ. of Tokyo)
We fabricated InAs quantum-dot (QD) microdisk lasers (MDLs) with air-claddings.
The room temperature (RT) lasing by fem... [more]
LQE2004-120
pp.11-14
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