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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2019-08-07
14:15		 Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2		 Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel
materials which ... [more]		 SDM2019-37 ICD2019-2
pp.7-10
SDM 2017-02-06
13:35		 Tokyo Tokyo Univ. [Invited Talk] Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143		 We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] SDM2016-143
pp.23-28
ICD, SDM, ITE-IST [detail] 2016-08-03
09:00		 Osaka Central Electric Club [Invited Talk] SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation
Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) SDM2016-60 ICD2016-28		  [more] SDM2016-60 ICD2016-28
pp.83-87
SDM, ICD 2015-08-24
15:00		 Kumamoto Kumamoto City [Invited Talk] Recent progress and challenges of high-mobility III-V/Ge CMOS technologies for low power LSI applications
Toshifumi Irisawa (AIST), Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Tsutomu Tezuka (AIST/Toshiba), Tatsurou Maeda, Hiroyuki Ota, Kazuhiko Endo (AIST) SDM2015-63 ICD2015-32		  [more] SDM2015-63 ICD2015-32
pp.31-36
SDM 2014-01-29
10:25		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137		 riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
SDM 2012-06-21
16:55		 Aichi VBL, Nagoya Univ. Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability
Toshifumi Irisawa, Minoru Oda, Tsutomu Tezuka (AIST) SDM2012-60		 Thickness controllability and thermal stability of Ni-InGaAs alloyed contact have been investigated with the aim of the ... [more] SDM2012-60
pp.93-96
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